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| 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) A (VDS = 600 V) Low leakage current: IDSS = 100 Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 10 40 45 363 10 4.5 150 -55~150 A W mJ A mJ C C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit 2 C/W C/W Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 1 2004-03-04 2SK3569 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 10 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 30 600 2.0 0.7 Typ. 0.54 8.5 1500 15 180 22 50 36 180 42 23 19 Max 10 100 4.0 0.75 pF Unit A V A V V S ns RL = 40 VDD 200 V - nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1300 16 Max 10 40 -1.7 Unit A A V ns C Marking K3569 TYPE Lot Number 2 2004-03-04 2SK3569 ID - VDS 10 COMMON SOURCE Tc = 25C PULSE TEST 10,8 6 5.3 20 10 5.1 5 4.8 6 4.6 4 4.4 2 4.2 ID - VDS 8 6 16 5.5 5.25 12 5 8 4.75 4.5 VGS = 4 V 0 0 COMMON SOURCE Tc = 25C PULSE TEST (A) 8 ID DRAIN CURRENT DRAIN CURRENT ID 4 VGS = 4V 0 0 2 4 6 8 10 10 20 30 (A) 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS (V) 20 COMMON SOURCE 10 VDS - VGS COMMON SOURCE Tc = 25 8 PULSE TEST (A) 16 VDS = 20 V PULSE TEST ID DRAIN CURRENT 12 DRAIN-SOURCE VOLTAGE VDS 6 ID = 10 A 8 Tc = -55C 4 100 25 0 0 2 4 6 8 10 4 2 5 2.5 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (S) 100 10 RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) () COMMON SOURCE Tc = 25C PULSE TEST 10 Tc = -55C 25 100 1 VGS = 10 V 15V 1 COMMON SOURCE VDS = 20 V 0.1 0.1 PULSE TEST 1 10 100 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2004-03-04 2SK3569 RDS (ON) - Tc 2.5 100 IDR - VDS IDR COMMON SOURCE Tc = 25C PULSE TEST 10 DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) COMMON SOURCE PULSE TEST 2.0 ID = 12A 1.5 6 1.0 VGS = 10 V 0.5 3 DRAIN REVERSE CURRENT (A) 1 10 5 3 1 0.1 0 -0.2 -0.4 -0.6 VGS = 0, -1 V -0.8 -1.0 -1.2 0 -80 -40 0 40 80 120 160 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE - VDS 10000 Ciss 5 Vth - Tc GATE THRESHOLD VOLTAGE Vth (V) (pF) 4 1000 Coss 100 C 3 CAPACITANCE 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160 Crss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc (V) 80 500 DYNAMIC INPUT / OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS 20 DRAIN POWER DISSIPATION PD (W) VDS 400 60 VDS VDD = 100 V 16 DRAIN-SOURCE VOLTAGE 300 200 200 VGS 400 COMMON SOURCE 100 ID = 3 A Tc = 25C PULSE TEST 0 0 10 20 30 40 50 12 40 8 20 4 0 0 40 80 120 160 200 0 60 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2004-03-04 2SK3569 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 2.78C/W 10 100 1 10 0.001 10 100 1 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max (PULSED) * 100 s * 400 500 EAS - Tch (A) 10 ID max (CONTINUOUS) * AVALANCHE ENERGY EAS (mJ) 300 DRAIN CURRENT ID 1 ms * DC OPERATION Tc = 25C 200 1 100 0.1 SINGLE NONREPETITIVE PULSE Tc=25 CURVES LINEARLY MUST WITH BE DERATED IN 0 25 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (C) VDSS max 100 1000 INCREASE 0.01 1 TEMPERATURE. 10 15 V -15 V BVDSS IAR VDD VDS DRAIN-SOURCE VOLTAGE VDS (V) TEST CIRCUIT RG = 25 VDD = 90 V, L = 6.36mH WAVE FORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2004-03-04 2SK3569 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-03-04 |
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